@inproceedings{bebfbb3e7f6e4426a4dee97189802b5b,
title = "TID and displacement damage effects in vertical and lateral power MOSFETs for integrated DC-DC converters",
abstract = "TID and displacement damage effects are studied for vertical and lateral power MOSFETs in five different technologies in view of the development of radiation-tolerant fully integrated DC-DC converters. Investigation is pushed to the very high level of radiation expected for an upgrade to the LHC experiments. TID induces threshold voltage shifts and, in n-channel transistors, source-drain leakage currents. Wide variability in the magnitude of these effects is observed. Displacement damage increases the on-resistance of both vertical and lateral high-voltage transistors. In the latter case, degradation at high particle fluence might lead to a distortion of the output characteristics curve. HBD techniques to limit or eliminate the radiation-induced leakage currents are successfully applied to these high-voltage transistors, but have to be used carefully to avoid consequences on the breakdown voltage.",
keywords = "DC-DC converter, LDMOS, displacement damage, radiation effects",
author = "F. Faccio and B. Allongue and G. Blanchot and C. Fuentes and S. Michelis and S. Orlandi and R. Sorge",
year = "2009",
doi = "10.1109/RADECS.2009.5994551",
language = "English",
isbn = "9781457704932",
series = "Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS",
pages = "46--53",
booktitle = "2009 European Conference on Radiation and Its Effects on Components and Systems",
note = "2009 10th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2009 ; Conference date: 14-09-2009 Through 18-09-2009",
}