TY - JOUR
T1 - The Advent of Electrically Conducting Double-Helical Metal-Organic Frameworks Featuring Butterfly-Shaped Electron-Rich π-Extended Tetrathiafulvalene Ligands
AU - Gordillo, Monica A.
AU - Benavides, Paola A.
AU - Panda, Dillip K.
AU - Saha, Sourav
N1 - Funding Information:
This work was supported by the National Science Foundation (award no. DMR-1809092 and CHE-1660329) and Clemson University. We thank Dr. Collin McMillen for assistance with single-crystal X-ray analysis.
Publisher Copyright:
Copyright © 2020 American Chemical Society.
PY - 2020/3/18
Y1 - 2020/3/18
N2 - To diversify metal-organic framework (MOF) structures beyond traditional Euclidean geometries and to create new charge-delocalization pathways beneficial for electrical conductivity, we constructed a novel double-helical MOF (dhMOF) by introducing a new butterfly-shaped electron-rich π-extended tetrathiafulvalene ligand equipped with four benzoate groups (ExTTFTB). The face-to-face oriented convex ExTTFTB ligands connected by Zn2(COO)4 paddlewheel nodes formed ovoid cavities suitable for guest encapsulation, while π-π-interaction between the ExTTFTB ligands of neighboring strands helped create new charge-delocalization pathways in iodine-mediated partially oxidized dhMOF. Iodine vapor diffusion led to oxidation of half of the ExTTFTB ligands in each double-helical strand to ExTTFTB•+ radical cations, which putatively formed intermolecular ExTTFTB/ExTTFTB•+ π-donor/acceptor charge-transfer chains with the neutral ExTTFTB ligands of an adjacent strand, creating supramolecular wire-like charge-delocalization pathways along the helix seams. In consequence, the electrical conductivity of dhMOF surged from 10-8 S/m up to 10-4 S/m range after iodine treatment. Thus, the introduction of the electron-rich ExTTFTB ligand with a distinctly convex π-surface not only afforded a novel double-helical MOF architecture featuring ovoid cavities and unique charge-delocalization pathways but also, more importantly, delivered a new tool and design strategy for future development of electrically conducting stimuli-responsive MOFs.
AB - To diversify metal-organic framework (MOF) structures beyond traditional Euclidean geometries and to create new charge-delocalization pathways beneficial for electrical conductivity, we constructed a novel double-helical MOF (dhMOF) by introducing a new butterfly-shaped electron-rich π-extended tetrathiafulvalene ligand equipped with four benzoate groups (ExTTFTB). The face-to-face oriented convex ExTTFTB ligands connected by Zn2(COO)4 paddlewheel nodes formed ovoid cavities suitable for guest encapsulation, while π-π-interaction between the ExTTFTB ligands of neighboring strands helped create new charge-delocalization pathways in iodine-mediated partially oxidized dhMOF. Iodine vapor diffusion led to oxidation of half of the ExTTFTB ligands in each double-helical strand to ExTTFTB•+ radical cations, which putatively formed intermolecular ExTTFTB/ExTTFTB•+ π-donor/acceptor charge-transfer chains with the neutral ExTTFTB ligands of an adjacent strand, creating supramolecular wire-like charge-delocalization pathways along the helix seams. In consequence, the electrical conductivity of dhMOF surged from 10-8 S/m up to 10-4 S/m range after iodine treatment. Thus, the introduction of the electron-rich ExTTFTB ligand with a distinctly convex π-surface not only afforded a novel double-helical MOF architecture featuring ovoid cavities and unique charge-delocalization pathways but also, more importantly, delivered a new tool and design strategy for future development of electrically conducting stimuli-responsive MOFs.
KW - double-helical MOFs
KW - electrical conductivity
KW - radical cation
KW - π-donor/acceptor interaction
KW - π-extended tetrathiafulvalene
UR - http://www.scopus.com/inward/record.url?scp=85082098778&partnerID=8YFLogxK
U2 - 10.1021/acsami.9b20234
DO - 10.1021/acsami.9b20234
M3 - Article
C2 - 31909971
AN - SCOPUS:85082098778
SN - 1944-8244
VL - 12
SP - 12955
EP - 12961
JO - ACS Applied Materials and Interfaces
JF - ACS Applied Materials and Interfaces
IS - 11
ER -