TY - JOUR
T1 - Surface roughness and size effects of thin gold films on mica
AU - Munoz, Raúl C.
AU - Concha, Andres
AU - Mora, Fernando
AU - Espejo, Roberto
AU - Vidal, Guillermo
AU - Mulsow, Marcelo
AU - Arenas, Claudio
PY - 2000
Y1 - 2000
N2 - We report measurements of the topography of a gold film deposited on a mica substrate using scanning tunneling microscope (STM), and measurements of the conductivity σ of the film performed between 4 and 300 K. From images obtained with the STM running in air in the constant current mode of a gold sample 70-nm-thick deposited under UHV on a mica substrate preheated to 300 °C, we compute the average autocorrelation function (ACF) that characterizes the surface of the film in the scale of (Formula presented) and determine by least-squares fitting the parameters δ (rms. amplitude) and ξ (lateral correlation length) corresponding to an exponential that best describes the average ACF data. Using an exponential representation of the ACF, the parameters δ and ξ determined from STM measurements, and a modified version of the theory of Sheng, Xing, and Wang recently proposed [R. C. Munoz et al., J. Phys.: Condens. Matter 11, L299 (1999)], we calculate the temperature dependence of the bulk resistivity (Formula presented) and of the increase in resistivity (Formula presented) induced by electron-surface scattering on this film. The result is that (Formula presented) amounts to about 2.6% at 300 K, and increases linearly with increasing mean free path, to about 10.5% at 4 K. The increase in resitivity Δρ turns out to be weakly temperature dependent.
AB - We report measurements of the topography of a gold film deposited on a mica substrate using scanning tunneling microscope (STM), and measurements of the conductivity σ of the film performed between 4 and 300 K. From images obtained with the STM running in air in the constant current mode of a gold sample 70-nm-thick deposited under UHV on a mica substrate preheated to 300 °C, we compute the average autocorrelation function (ACF) that characterizes the surface of the film in the scale of (Formula presented) and determine by least-squares fitting the parameters δ (rms. amplitude) and ξ (lateral correlation length) corresponding to an exponential that best describes the average ACF data. Using an exponential representation of the ACF, the parameters δ and ξ determined from STM measurements, and a modified version of the theory of Sheng, Xing, and Wang recently proposed [R. C. Munoz et al., J. Phys.: Condens. Matter 11, L299 (1999)], we calculate the temperature dependence of the bulk resistivity (Formula presented) and of the increase in resistivity (Formula presented) induced by electron-surface scattering on this film. The result is that (Formula presented) amounts to about 2.6% at 300 K, and increases linearly with increasing mean free path, to about 10.5% at 4 K. The increase in resitivity Δρ turns out to be weakly temperature dependent.
UR - http://www.scopus.com/inward/record.url?scp=0000149824&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.61.4514
DO - 10.1103/PhysRevB.61.4514
M3 - Article
AN - SCOPUS:0000149824
SN - 1098-0121
VL - 61
SP - 4514
EP - 4517
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 7
ER -