Optimization, design and size effect on the performance of Ag/CdS:Cu/FTO/glass based Schottky diode

Chandra Kumar; Vikas Kashyap; Monika Shrivastava; Fernando Guzman; Kapil Saxena

doi:10.1016/j.matlet.2023.134973

Optimization, design and size effect on the performance of Ag/CdS:Cu/FTO/glass based Schottky diode

Chandra Kumar, Vikas Kashyap, Monika Shrivastava, Fernando Guzman, Kapil Saxena

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Influences of annealing on optical properties of spray pyrolysis deposited Cu-doped CdS (CdS:Cu) thin-films are investigated and designed Ag/CdS:Cu/FTO/glass based Schottky diode performances are discussed in detail. The sizes of the thin film are estimated through field-emission scanning electron microscopy (FESEM) images, exhibited that the films are composed of different-size, which increases with increasing the annealing temperature. The band-gap decreases from 2.79 eV to 2.75 eV with incresing annealing temperatures. According to I–V measurement, the ideality factor (η), potential height (φ_h) and series resistance (R_h) of Ag/CdS:Cu/FTO/glass Schottky diodes are estimated by various methods like thermionic-emission, Cheung and Norde, these all methods are consistent well. The ideality-factor and series-resistance decrease with increasing temperature and size. When the CdS:Cu thin-films are annealed at 400°C, the Ag/CdS:Cu Schottky diodes have good rectifying behaviors with an ideality-factor of 4.67–5.03, a Schottky-potential height of 0.98 eV–0.87 eV and relatively low series-resistance of 2.35kΩ-3.12kΩ. The present study will give a better understanding and insight into the Ag/CdS:Cu/FTO/glass Schottky junction.

Original language	English
Article number	134973
Journal	Materials Letters
Volume	350
DOIs	https://doi.org/10.1016/j.matlet.2023.134973
State	Published - 1 Nov 2023
Externally published	Yes

Keywords

CdS
Electrical properties
Schottky diode
Thin films

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10.1016/j.matlet.2023.134973

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title = "Optimization, design and size effect on the performance of Ag/CdS:Cu/FTO/glass based Schottky diode",

abstract = "Influences of annealing on optical properties of spray pyrolysis deposited Cu-doped CdS (CdS:Cu) thin-films are investigated and designed Ag/CdS:Cu/FTO/glass based Schottky diode performances are discussed in detail. The sizes of the thin film are estimated through field-emission scanning electron microscopy (FESEM) images, exhibited that the films are composed of different-size, which increases with increasing the annealing temperature. The band-gap decreases from 2.79 eV to 2.75 eV with incresing annealing temperatures. According to I–V measurement, the ideality factor (η), potential height (φh) and series resistance (Rh) of Ag/CdS:Cu/FTO/glass Schottky diodes are estimated by various methods like thermionic-emission, Cheung and Norde, these all methods are consistent well. The ideality-factor and series-resistance decrease with increasing temperature and size. When the CdS:Cu thin-films are annealed at 400°C, the Ag/CdS:Cu Schottky diodes have good rectifying behaviors with an ideality-factor of 4.67–5.03, a Schottky-potential height of 0.98 eV–0.87 eV and relatively low series-resistance of 2.35kΩ-3.12kΩ. The present study will give a better understanding and insight into the Ag/CdS:Cu/FTO/glass Schottky junction.",

keywords = "CdS, Electrical properties, Schottky diode, Thin films",

author = "Chandra Kumar and Vikas Kashyap and Monika Shrivastava and Fernando Guzman and Kapil Saxena",

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year = "2023",

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T1 - Optimization, design and size effect on the performance of Ag/CdS:Cu/FTO/glass based Schottky diode

AU - Kumar, Chandra

AU - Kashyap, Vikas

AU - Shrivastava, Monika

AU - Guzman, Fernando

AU - Saxena, Kapil

PY - 2023/11/1

Y1 - 2023/11/1

N2 - Influences of annealing on optical properties of spray pyrolysis deposited Cu-doped CdS (CdS:Cu) thin-films are investigated and designed Ag/CdS:Cu/FTO/glass based Schottky diode performances are discussed in detail. The sizes of the thin film are estimated through field-emission scanning electron microscopy (FESEM) images, exhibited that the films are composed of different-size, which increases with increasing the annealing temperature. The band-gap decreases from 2.79 eV to 2.75 eV with incresing annealing temperatures. According to I–V measurement, the ideality factor (η), potential height (φh) and series resistance (Rh) of Ag/CdS:Cu/FTO/glass Schottky diodes are estimated by various methods like thermionic-emission, Cheung and Norde, these all methods are consistent well. The ideality-factor and series-resistance decrease with increasing temperature and size. When the CdS:Cu thin-films are annealed at 400°C, the Ag/CdS:Cu Schottky diodes have good rectifying behaviors with an ideality-factor of 4.67–5.03, a Schottky-potential height of 0.98 eV–0.87 eV and relatively low series-resistance of 2.35kΩ-3.12kΩ. The present study will give a better understanding and insight into the Ag/CdS:Cu/FTO/glass Schottky junction.

AB - Influences of annealing on optical properties of spray pyrolysis deposited Cu-doped CdS (CdS:Cu) thin-films are investigated and designed Ag/CdS:Cu/FTO/glass based Schottky diode performances are discussed in detail. The sizes of the thin film are estimated through field-emission scanning electron microscopy (FESEM) images, exhibited that the films are composed of different-size, which increases with increasing the annealing temperature. The band-gap decreases from 2.79 eV to 2.75 eV with incresing annealing temperatures. According to I–V measurement, the ideality factor (η), potential height (φh) and series resistance (Rh) of Ag/CdS:Cu/FTO/glass Schottky diodes are estimated by various methods like thermionic-emission, Cheung and Norde, these all methods are consistent well. The ideality-factor and series-resistance decrease with increasing temperature and size. When the CdS:Cu thin-films are annealed at 400°C, the Ag/CdS:Cu Schottky diodes have good rectifying behaviors with an ideality-factor of 4.67–5.03, a Schottky-potential height of 0.98 eV–0.87 eV and relatively low series-resistance of 2.35kΩ-3.12kΩ. The present study will give a better understanding and insight into the Ag/CdS:Cu/FTO/glass Schottky junction.

KW - CdS

KW - Electrical properties

KW - Schottky diode

KW - Thin films

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Optimization, design and size effect on the performance of Ag/CdS:Cu/FTO/glass based Schottky diode

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