TY - JOUR
T1 - Nanoengineering of MXene-Based Field-Effect Transistor Gas Sensors
T2 - Advancements in Next-Generation Electronic Devices
AU - Baraneedharan, P.
AU - Shankari, D.
AU - Arulraj, A.
AU - Sephra, Percy J.
AU - Mangalaraja, R. V.
AU - Khalid, Mohammad
N1 - Publisher Copyright:
© 2023 The Electrochemical Society (“ECS”). Published on behalf of ECS by IOP Publishing Limited
PY - 2023/10/1
Y1 - 2023/10/1
N2 - In recent years, Two-Dimensional (2D) materials have gained significant attention for their distinctive physical and chemical properties, positioning them as promising contenders for the next generation of electronic technologies. One notable group within these materials is MXenes, which have exhibited remarkable breakthroughs across various technological domains, including catalysis, renewable energy, electronics, sensors, fuel cells, and supercapacitors. By making subtle modifications to the surface termination, introducing metal ions, precise etching timing, and applying surface functionalization, the characteristics of MXenes can be fine-tuned to achieve desired band structures, rendering them suitable for sensor design. This review focuses on the strategic development of gas sensors based on Field-Effect Transistors (FETs), thoroughly examining the latest progress in MXene-based material design and addressing associated challenges and future prospects. The review aims to provide a comprehensive overview of MXene, summarizing its current applications and advancements in FET-based gas sensing.
AB - In recent years, Two-Dimensional (2D) materials have gained significant attention for their distinctive physical and chemical properties, positioning them as promising contenders for the next generation of electronic technologies. One notable group within these materials is MXenes, which have exhibited remarkable breakthroughs across various technological domains, including catalysis, renewable energy, electronics, sensors, fuel cells, and supercapacitors. By making subtle modifications to the surface termination, introducing metal ions, precise etching timing, and applying surface functionalization, the characteristics of MXenes can be fine-tuned to achieve desired band structures, rendering them suitable for sensor design. This review focuses on the strategic development of gas sensors based on Field-Effect Transistors (FETs), thoroughly examining the latest progress in MXene-based material design and addressing associated challenges and future prospects. The review aims to provide a comprehensive overview of MXene, summarizing its current applications and advancements in FET-based gas sensing.
UR - http://www.scopus.com/inward/record.url?scp=85181503029&partnerID=8YFLogxK
U2 - 10.1149/1945-7111/acfc2b
DO - 10.1149/1945-7111/acfc2b
M3 - Review article
AN - SCOPUS:85181503029
SN - 0013-4651
VL - 170
JO - Journal of the Electrochemical Society
JF - Journal of the Electrochemical Society
IS - 10
M1 - 107501
ER -