@article{df8accf792534d9fbdb570ebdeec561e,
title = "Increasing Volume in Conjugated Polymers to Facilitate Electrical Doping with Phosphomolybdic Acid",
abstract = "Molecular p-type electrical dopants have been proven useful to fine-tune the optoelectronic properties of bulk organic semiconductors and their interfaces. Here, the volume in polymer films and its role in solution-based electrical p-type doping using phosphomolybdic acid (PMA) are studied. The polymer film volume was controlled using two approaches. One is based on heating both the PMA solution and the film prior to immersion. The second is based on coating the polymer film with a liquid blend that contains the PMA solution and a swelling solvent. 31P NMR and FTIR experiments indicate that the Keggin structure appears to be preserved throughout the doping process. Results show that increasing the polymer volume facilitates the infiltration of the PMA Keggin structure, which results in an increased electrical p-type doping level.",
keywords = "electrical doping, organic electronics, organic photovoltaics",
author = "Larrain, {Felipe A.} and Canek Fuentes-Hernandez and Chang, {Yi Chien} and Rodriguez-Toro, {Victor A.} and Silja Abraham and Bernard Kippelen",
note = "Funding Information: This research was supported in part by the Center for Organic Photonics and Electronics at Georgia Tech, by the Department of the Navy, Office of Naval Research Award Nos. N00014-14-1-0580 and N00014-16-1-2520, through the MURI Center for Advanced Photovoltaics (CAOP), the Air Force Office of Scientific Research through Award No. FA9550-16-1-0168, and by the Department of Energy/National Nuclear Security Administration (NNSA) Award No. DE-NA0002576 through the Consortium for Nonproliferation Enabling Capabilities (CNEC) and Award No. DE-NA0003921 through the Consortium for Enabling Technologies and Innovation (ETI). The authors also acknowledge the support of CONICYT (Chilean National Commission for Scientific and Technological Research) through the Doctoral Fellowship program “Becas Chile”, Grant No. 72150387 for F.A.L., as well as support from COLCIENCIAS (Colombian Administrative Department of Science, Technology and Innovation) through the program Fulbright-Colciencias for V.A.R.-T. Part of this work was conducted at the Institute for Electronics and Nanotechnology at the Georgia Institute of Technology, a member of the National Nanotechnology Coordinated Infrastructure, which is supported by the National Science Foundation (Grant ECCS-1542174). Publisher Copyright: {\textcopyright} 2021 American Chemical Society.",
year = "2021",
month = may,
day = "19",
doi = "10.1021/acsami.1c05133",
language = "English",
volume = "13",
pages = "23260--23267",
journal = "ACS Applied Materials and Interfaces",
issn = "1944-8244",
publisher = "American Chemical Society",
number = "19",
}