Fabrication and characterization of a diluted magnetic semiconducting TM co-doped Al:ZnO (TM = Co, Ni) thin films by sol-gel spin coating method

R. Siddheswaran; R. V. Mangalaraja; Eduardo P. Tijerina; J. Luis Menchaca; M. F. Meléndrez; Ricardo E. Avila; C. Esther Jeyanthi; M. E. Gomez

doi:10.1016/j.saa.2013.01.017

Fabrication and characterization of a diluted magnetic semiconducting TM co-doped Al:ZnO (TM = Co, Ni) thin films by sol-gel spin coating method

R. Siddheswaran, R. V. Mangalaraja, Eduardo P. Tijerina, J. Luis Menchaca, M. F. Meléndrez, Ricardo E. Avila, C. Esther Jeyanthi, M. E. Gomez

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

Effect of transition metal oxides (TM = Co and Ni) co-doping on the crystallinity, surface morphology, grain growth and magnetic properties of nanostructure Al:ZnO thin films has been studied for diluted magnetic semiconductor applications. Al:ZnO thin films were fabricated by sol-gel spin coating on p-type Si (100) substrates. Fabrication of hexagonal wurtzite TM co-doped Al:ZnO thin films having thickness 2 μm was successfully achieved. The Raman spectra of the TM co-doped Al:ZnO thin films showed a broad vibrational mode in the range 520-540 cm^-1 due to crystal defects created co-doping elements in the ZnO host lattice. Scanning electron microscopy (SEM) revealed that the films are composed of uniform size, polycrystalline dense ZnO particles with defect free, smooth surfaces. The surface roughness was further verified with atomic force microscopy (AFM). The energy dispersive X-ray spectroscopic analysis (EDX) confirmed the stoichiometric compositions of the TM co-doped Al:ZnO films. The magnetic measurements exhibited that the Co, Al:ZnO and Ni, Al:ZnO thin films were ferromagnetic at room temperature.

Original language	English
Pages (from-to)	118-123
Number of pages	6
Journal	Spectrochimica Acta - Part A: Molecular and Biomolecular Spectroscopy
Volume	106
DOIs	https://doi.org/10.1016/j.saa.2013.01.017
State	Published - Apr 2013
Externally published	Yes

Keywords

Diluted magnetic semiconductor
Ferromagnetism
Microstructure
Raman spectra
Thin films

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10.1016/j.saa.2013.01.017

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Siddheswaran, R., Mangalaraja, R. V., Tijerina, E. P., Menchaca, J. L., Meléndrez, M. F., Avila, R. E., Esther Jeyanthi, C., & Gomez, M. E. (2013). Fabrication and characterization of a diluted magnetic semiconducting TM co-doped Al:ZnO (TM = Co, Ni) thin films by sol-gel spin coating method. Spectrochimica Acta - Part A: Molecular and Biomolecular Spectroscopy, 106, 118-123. https://doi.org/10.1016/j.saa.2013.01.017

@article{b96587d1c26144c08a41085b1b724042,

title = "Fabrication and characterization of a diluted magnetic semiconducting TM co-doped Al:ZnO (TM = Co, Ni) thin films by sol-gel spin coating method",

abstract = "Effect of transition metal oxides (TM = Co and Ni) co-doping on the crystallinity, surface morphology, grain growth and magnetic properties of nanostructure Al:ZnO thin films has been studied for diluted magnetic semiconductor applications. Al:ZnO thin films were fabricated by sol-gel spin coating on p-type Si (100) substrates. Fabrication of hexagonal wurtzite TM co-doped Al:ZnO thin films having thickness 2 μm was successfully achieved. The Raman spectra of the TM co-doped Al:ZnO thin films showed a broad vibrational mode in the range 520-540 cm-1 due to crystal defects created co-doping elements in the ZnO host lattice. Scanning electron microscopy (SEM) revealed that the films are composed of uniform size, polycrystalline dense ZnO particles with defect free, smooth surfaces. The surface roughness was further verified with atomic force microscopy (AFM). The energy dispersive X-ray spectroscopic analysis (EDX) confirmed the stoichiometric compositions of the TM co-doped Al:ZnO films. The magnetic measurements exhibited that the Co, Al:ZnO and Ni, Al:ZnO thin films were ferromagnetic at room temperature.",

keywords = "Diluted magnetic semiconductor, Ferromagnetism, Microstructure, Raman spectra, Thin films",

author = "R. Siddheswaran and Mangalaraja, {R. V.} and Tijerina, {Eduardo P.} and Menchaca, {J. Luis} and Mel{\'e}ndrez, {M. F.} and Avila, {Ricardo E.} and {Esther Jeyanthi}, C. and Gomez, {M. E.}",

note = "Funding Information: The authors wish to acknowledge FONDECYT, Chile (Project Nos.: 3110026 and 1100349) and Direction of Investigation, University of Concepcion, Chile for the financial supports. ",

year = "2013",

month = apr,

doi = "10.1016/j.saa.2013.01.017",

language = "English",

volume = "106",

pages = "118--123",

journal = "Spectrochimica Acta - Part A: Molecular and Biomolecular Spectroscopy",

issn = "1386-1425",

publisher = "Elsevier B.V.",

}

Siddheswaran, R, Mangalaraja, RV, Tijerina, EP, Menchaca, JL, Meléndrez, MF, Avila, RE, Esther Jeyanthi, C & Gomez, ME 2013, 'Fabrication and characterization of a diluted magnetic semiconducting TM co-doped Al:ZnO (TM = Co, Ni) thin films by sol-gel spin coating method', Spectrochimica Acta - Part A: Molecular and Biomolecular Spectroscopy, vol. 106, pp. 118-123. https://doi.org/10.1016/j.saa.2013.01.017

Fabrication and characterization of a diluted magnetic semiconducting TM co-doped Al:ZnO (TM = Co, Ni) thin films by sol-gel spin coating method. / Siddheswaran, R.; Mangalaraja, R. V.; Tijerina, Eduardo P. et al.
In: Spectrochimica Acta - Part A: Molecular and Biomolecular Spectroscopy, Vol. 106, 04.2013, p. 118-123.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Fabrication and characterization of a diluted magnetic semiconducting TM co-doped Al:ZnO (TM = Co, Ni) thin films by sol-gel spin coating method

AU - Siddheswaran, R.

AU - Mangalaraja, R. V.

AU - Tijerina, Eduardo P.

AU - Menchaca, J. Luis

AU - Meléndrez, M. F.

AU - Avila, Ricardo E.

AU - Esther Jeyanthi, C.

AU - Gomez, M. E.

N1 - Funding Information: The authors wish to acknowledge FONDECYT, Chile (Project Nos.: 3110026 and 1100349) and Direction of Investigation, University of Concepcion, Chile for the financial supports.

PY - 2013/4

Y1 - 2013/4

N2 - Effect of transition metal oxides (TM = Co and Ni) co-doping on the crystallinity, surface morphology, grain growth and magnetic properties of nanostructure Al:ZnO thin films has been studied for diluted magnetic semiconductor applications. Al:ZnO thin films were fabricated by sol-gel spin coating on p-type Si (100) substrates. Fabrication of hexagonal wurtzite TM co-doped Al:ZnO thin films having thickness 2 μm was successfully achieved. The Raman spectra of the TM co-doped Al:ZnO thin films showed a broad vibrational mode in the range 520-540 cm-1 due to crystal defects created co-doping elements in the ZnO host lattice. Scanning electron microscopy (SEM) revealed that the films are composed of uniform size, polycrystalline dense ZnO particles with defect free, smooth surfaces. The surface roughness was further verified with atomic force microscopy (AFM). The energy dispersive X-ray spectroscopic analysis (EDX) confirmed the stoichiometric compositions of the TM co-doped Al:ZnO films. The magnetic measurements exhibited that the Co, Al:ZnO and Ni, Al:ZnO thin films were ferromagnetic at room temperature.

AB - Effect of transition metal oxides (TM = Co and Ni) co-doping on the crystallinity, surface morphology, grain growth and magnetic properties of nanostructure Al:ZnO thin films has been studied for diluted magnetic semiconductor applications. Al:ZnO thin films were fabricated by sol-gel spin coating on p-type Si (100) substrates. Fabrication of hexagonal wurtzite TM co-doped Al:ZnO thin films having thickness 2 μm was successfully achieved. The Raman spectra of the TM co-doped Al:ZnO thin films showed a broad vibrational mode in the range 520-540 cm-1 due to crystal defects created co-doping elements in the ZnO host lattice. Scanning electron microscopy (SEM) revealed that the films are composed of uniform size, polycrystalline dense ZnO particles with defect free, smooth surfaces. The surface roughness was further verified with atomic force microscopy (AFM). The energy dispersive X-ray spectroscopic analysis (EDX) confirmed the stoichiometric compositions of the TM co-doped Al:ZnO films. The magnetic measurements exhibited that the Co, Al:ZnO and Ni, Al:ZnO thin films were ferromagnetic at room temperature.

KW - Diluted magnetic semiconductor

KW - Ferromagnetism

KW - Microstructure

KW - Raman spectra

KW - Thin films

UR - http://www.scopus.com/inward/record.url?scp=84873426287&partnerID=8YFLogxK

U2 - 10.1016/j.saa.2013.01.017

DO - 10.1016/j.saa.2013.01.017

M3 - Article

C2 - 23396005

AN - SCOPUS:84873426287

SN - 1386-1425

VL - 106

SP - 118

EP - 123

JO - Spectrochimica Acta - Part A: Molecular and Biomolecular Spectroscopy

JF - Spectrochimica Acta - Part A: Molecular and Biomolecular Spectroscopy

ER -

Fabrication and characterization of a diluted magnetic semiconducting TM co-doped Al:ZnO (TM = Co, Ni) thin films by sol-gel spin coating method

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Keywords

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