Effect of high energy ion irradiation on silicon substrate in a pulsed plasma device

H. Bhuyan; M. Favre; E. Valderrama; G. Avaria; F. Guzman; H. Chuaqui; I. Mitchell; E. Wyndham; R. Saavedra; M. Paulraj

doi:10.1016/j.apsusc.2007.07.029

Effect of high energy ion irradiation on silicon substrate in a pulsed plasma device

H. Bhuyan, M. Favre, E. Valderrama, G. Avaria, F. Guzman, H. Chuaqui, I. Mitchell, E. Wyndham, R. Saavedra, M. Paulraj

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

We have performed an experimental analysis on the investigation of high energy ion beam irradiation on Si(1 0 0) substrates at room temperature using a low energy plasma focus (PF) device operating in methane gas. The surface modifications induced by the ion beams are characterized using standard surface science diagnostic tools, such as X-ray diffraction (XRD), scanning electron microscopy (SEM), photothermal beam deflection, energy-dispersive X-ray (EDX) analysis and atomic force microscope (AFM) and the results are reported. In particular, it has been found that with silicon targets, the application of PF carbon ion beams results in the formation of a surface layer of hexagonal (6H) silicon carbide, with embedded self-organized step/terrace structures.

Original language	English
Pages (from-to)	197-200
Number of pages	4
Journal	Applied Surface Science
Volume	254
Issue number	1 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.apsusc.2007.07.029
State	Published - 31 Oct 2007
Externally published	Yes

Keywords

Ion beam irradiation
Plasma focus
Silicon carbide

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10.1016/j.apsusc.2007.07.029

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@article{07b1d0f0dd524c35ab5fe06d3472376b,

title = "Effect of high energy ion irradiation on silicon substrate in a pulsed plasma device",

abstract = "We have performed an experimental analysis on the investigation of high energy ion beam irradiation on Si(1 0 0) substrates at room temperature using a low energy plasma focus (PF) device operating in methane gas. The surface modifications induced by the ion beams are characterized using standard surface science diagnostic tools, such as X-ray diffraction (XRD), scanning electron microscopy (SEM), photothermal beam deflection, energy-dispersive X-ray (EDX) analysis and atomic force microscope (AFM) and the results are reported. In particular, it has been found that with silicon targets, the application of PF carbon ion beams results in the formation of a surface layer of hexagonal (6H) silicon carbide, with embedded self-organized step/terrace structures.",

keywords = "Ion beam irradiation, Plasma focus, Silicon carbide",

author = "H. Bhuyan and M. Favre and E. Valderrama and G. Avaria and F. Guzman and H. Chuaqui and I. Mitchell and E. Wyndham and R. Saavedra and M. Paulraj",

note = "Funding Information: The authors acknowledge support from FONDECYT grants 3050082 and 1030970. The technical assistance of E. Cisternas, D. De Jong, D. {\'A}lvarez, M. Pino and M. Moreno are highly appreciated.",

year = "2007",

month = oct,

day = "31",

doi = "10.1016/j.apsusc.2007.07.029",

language = "English",

volume = "254",

pages = "197--200",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier B.V.",

number = "1 SPEC. ISS.",

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TY - JOUR

T1 - Effect of high energy ion irradiation on silicon substrate in a pulsed plasma device

AU - Bhuyan, H.

AU - Favre, M.

AU - Valderrama, E.

AU - Avaria, G.

AU - Guzman, F.

AU - Chuaqui, H.

AU - Mitchell, I.

AU - Wyndham, E.

AU - Saavedra, R.

AU - Paulraj, M.

N1 - Funding Information: The authors acknowledge support from FONDECYT grants 3050082 and 1030970. The technical assistance of E. Cisternas, D. De Jong, D. Álvarez, M. Pino and M. Moreno are highly appreciated.

PY - 2007/10/31

Y1 - 2007/10/31

N2 - We have performed an experimental analysis on the investigation of high energy ion beam irradiation on Si(1 0 0) substrates at room temperature using a low energy plasma focus (PF) device operating in methane gas. The surface modifications induced by the ion beams are characterized using standard surface science diagnostic tools, such as X-ray diffraction (XRD), scanning electron microscopy (SEM), photothermal beam deflection, energy-dispersive X-ray (EDX) analysis and atomic force microscope (AFM) and the results are reported. In particular, it has been found that with silicon targets, the application of PF carbon ion beams results in the formation of a surface layer of hexagonal (6H) silicon carbide, with embedded self-organized step/terrace structures.

AB - We have performed an experimental analysis on the investigation of high energy ion beam irradiation on Si(1 0 0) substrates at room temperature using a low energy plasma focus (PF) device operating in methane gas. The surface modifications induced by the ion beams are characterized using standard surface science diagnostic tools, such as X-ray diffraction (XRD), scanning electron microscopy (SEM), photothermal beam deflection, energy-dispersive X-ray (EDX) analysis and atomic force microscope (AFM) and the results are reported. In particular, it has been found that with silicon targets, the application of PF carbon ion beams results in the formation of a surface layer of hexagonal (6H) silicon carbide, with embedded self-organized step/terrace structures.

KW - Ion beam irradiation

KW - Plasma focus

KW - Silicon carbide

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U2 - 10.1016/j.apsusc.2007.07.029

DO - 10.1016/j.apsusc.2007.07.029

M3 - Article

AN - SCOPUS:35148825628

SN - 0169-4332

VL - 254

SP - 197

EP - 200

JO - Applied Surface Science

JF - Applied Surface Science

IS - 1 SPEC. ISS.

ER -

Effect of high energy ion irradiation on silicon substrate in a pulsed plasma device

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Keywords

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