A Study on Reducing Contact Resistance in Solution-Processed Organic Field-Effect Transistors

Sangmoo Choi, Canek Fuentes-Hernandez, Cheng Yin Wang, Talha M. Khan, Felipe A. Larrain, Yadong Zhang, Stephen Barlow, Seth R. Marder, Bernard Kippelen

Research output: Contribution to journalArticlepeer-review

71 Scopus citations


We report on the reduction of contact resistance in solution-processed TIPS-pentacene (6,13-bis(triisopropylsilylethynyl)pentacene) and PTAA (poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine]) top-gate bottom-contact organic field-effect transistors (OFETs) by using different contact-modification strategies. The study compares the contact resistance values in devices that comprise Au source/drain electrodes either treated with 2,3,4,5,6-pentafluorothiophenol (PFBT), or modified with an evaporated thin layer of the metal-organic molecular dopant molybdenum tris-[1,2-bis(trifluoromethyl)ethane-1,2-dithiolene] (Mo(tfd)3), or modified with a thin layer of the oxide MoO3. An improved performance is observed in devices modified with Mo(tfd)3 or MoO3 as compared to devices in which Au electrodes are modified with PFBT. We discuss the origin of the decrease in contact resistance in terms of increase of the work function of the modified Au electrodes, Fermi-level pinning effects, and decrease of bulk resistance by electrically doping the organic semiconductor films in the vicinity of the source/drain electrodes.

Original languageEnglish
Pages (from-to)24744-24752
Number of pages9
JournalACS Applied Materials and Interfaces
Issue number37
StatePublished - 21 Sep 2016
Externally publishedYes


  • Fermi-level pinning
  • TIPS-pentacene/PTAA
  • contact doping
  • contact resistance
  • molybdenum trioxide
  • molybdenum tris-[1,2-bis(trifluoromethyl)ethane-1,2-dithiolene]
  • organic field-effect transistors
  • top-gate geometry


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